Program

Research and development for wide bandgap oxide materials and their applications have been increasingly pervasive in many fields such as high-performance thin film transistors (TFTs/TTFTs) or storage devices, renewable energy technologies, various kinds of display devices, and many other optoelectronic applications. In particular, transparent oxide semiconductors (TOSs) and amorphous oxide semiconductors (AOSs) have attracted much attention as high-performance channel materials for thin film transistors. Moreover, transparent conductive oxides (TCOs) have also been the key enabling materials for the emerging technologies driving the sophisticated applications needed to realize a “Ubiquitous Information Society” and a “Universal Design”. These topics will be discussed in a framework of traditional and emerging fields of oxide materials and their device applications including but not limited to: TOSs, AOSs and TCOs for high-performance TFTs/TTFTs, solar cells, displays, lighting, storage, flexible electronics and other transparent electronics.

• Materials for transparent oxide electronics
• Materials for metal nano-network or carbon based transparent electronics
• Indium-based or Indium-free high performance transparent conducting oxides
• Theory-based guidance for new materials development and optimization
• Solution processing and printing of transparent electrodes, transistors and sensors
• Applications of transparent materials for renewable energy technologies including photocatalysts and smart window systems
• Applications of transparent materials to new and emerging electronics

• Nobuto OKA, Kindai University Local Structure of Conductive Vanadate Glass and its Application to the Rechargeable Batteries
• Junjun JIA, Waseda University Toward the understanding of the defect-functionality relationship in bipolar SnO thin films
• Luis PEREIRA
• Klaus ELLMER
• Monica MORALES-MASIS Functionalizing transparent conducting oxides for solar cells: from disordered oxides to epitaxial perovskites
• Takaya KUBO, The University of Tokyo Surface engineering ZnO nanowires for colloidal quantum dot photovoltaics
• Yasushi HIROSE, The University of Tokyo
• UEDA, Kyusyu Institute of Tech.
• YANAGI, Yamanasi University
• Naoomi YAMADA, Chubu University
• Zhang QUN, Fudan University
• Ding SHIJIN, Fudan University Amorphous IGZO-based thin-film transistors for emerging functional applications
• Ye HUI, Zhejiang University
• Han DEDONG, Peking University
• Sang Yeol LEE, Cheongju University Metal capping effect on the electrical performance and the stability of transparent amorphous SiZnSnO thin film transistor

• Yuzo SHIGESATO Aoyama Gakuin University
• Nobuto OKA Kindai University

• Nobuto OKA, Kindai University Email: nobuto.oka@fuk.kindai.ac.jp